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Semiconductors and Superconductivity: Foundations of Modern Technology

Semiconductor Physics

Band Structure

  • Silicon Bandgap: 1.12 eV at 300K
  • GaAs Bandgap: 1.42 eV (direct bandgap)
  • Carrier Concentration: n_i = 1.5 \times 10^{10} \, \text{cm}^{-3} (Si, 300K)

Doping Techniques

TypeDopantCarriersConcentration Range
n-typePhosphorus (Si)Electrons10¹⁴-10²⁰ cm⁻³
p-typeBoron (Si)Holes10¹⁴-10²⁰ cm⁻³

Superconductivity Fundamentals

BCS Theory

  • Cooper pairs form below Tc
  • Critical temperature equation: T_c \approx 1.13\theta_D e^{-1/N(0)V}

Type I vs Type II

PropertyType IType II
MaterialsPure metalsAlloys/Compounds
Tc Range< 10KUp to 138K (HgBaCaCuO)

Cutting-Edge Applications

Quantum Computing

  • Superconducting qubits operate at ~15 mK
  • Coherence times: 50-100 μs (2023)

Power Grid Innovations

  • REBCO tapes carry 500 A/mm² at 77K
  • Superconducting fault current limiters respond in <5 ms

Neuromorphic Chips

  • Memristors emulate synapses (10¹² ops/J)
  • Phase-change materials for analog computing

Worked Example

Solar Cell Parameters:

    \[ P_{out} = IV = 50 \, \text{W} \]

    \[ P_{in} = \frac{P_{out}}{\eta} = \frac{50}{0.22} \approx 227 \, \text{W solar input} \]

Critical Thinking Questions

  1. Explain how the Meissner effect enables maglev trains to achieve stable levitation
  2. Compare electron mobility in Si (1500 cm²/Vs) vs GaAs (8500 cm²/Vs)
  3. Calculate the London penetration depth for Nb (λL ≈ 39 nm)

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